FDS6911 MOSFETs Transistors Arrays_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

TYPE	DESCRIPTION
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Factory Lead Time	10 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	187mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Voltage - Rated DC	20V
Max Power Dissipation	900mW
Terminal Form	GULL WING
Current Rating	7.5A
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.6W
Turn On Delay Time	9 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	13m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1130pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	24nC @ 10V
Rise Time	5ns
Fall Time (Typ)	5 ns
Turn-Off Delay Time	26 ns
Continuous Drain Current (ID)	7.5A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.013Ohm
Drain to Source Breakdown Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Nominal Vgs	1.8 V
Height	1.575mm
Length	4.9mm
Width	3.9mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free


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