• image of 预偏置双极性结型晶体管>DDTA123JUA-7-F
  • image of 预偏置双极性结型晶体管>DDTA123JUA-7-F
DDTA123JUA-7-F
Pre-Biased BJT Transistors
Diodes Incorporated
DDTA123JUA-7-F
-
SC-70, SOT-323
YES

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image of 预偏置双极性结型晶体管>DDTA123JUA-7-F
image of 预偏置双极性结型晶体管>DDTA123JUA-7-F
DDTA123JUA-7-F
Pre-Biased BJT Transistors
Diodes Incorporated
DDTA123JUA-7-F
-
SC-70, SOT-323
YES
TYPEDESCRIPTION
Factory Lead Time 19 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Weight 6.010099mg
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
HTS Code 8541.21.00.75
Voltage - Rated DC -50V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -100mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number DDTA123
Pin Count 3
Number of Elements 1
Polarity PNP
Element Configuration Single
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 250MHz
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
hFE Min 80
Resistor - Base (R1) 2.2 k Ω
Continuous Collector Current -100mA
Resistor - Emitter Base (R2) 47 k Ω
Height 1mm
Length 2.2mm
Width 1.35mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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