• image of 双极性结型晶体管阵列>RN4981FE,LF(CT
  • image of 双极性结型晶体管阵列>RN4981FE,LF(CT
RN4981FE,LF(CT
BJT Transistors Arrays
Toshiba Semiconductor and Storage
RN4981FE,LF(CT
-
SOT-563, SOT-666
YES

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image of 双极性结型晶体管阵列>RN4981FE,LF(CT
image of 双极性结型晶体管阵列>RN4981FE,LF(CT
RN4981FE,LF(CT
BJT Transistors Arrays
Toshiba Semiconductor and Storage
RN4981FE,LF(CT
-
SOT-563, SOT-666
YES
TYPEDESCRIPTION
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Weight 3.005049mg
Packaging Cut Tape (CT)
Published 2017
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 100mW
Polarity NPN, PNP
Number of Channels 2
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) -50V
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz 200MHz
Emitter Base Voltage (VEBO) -10V
hFE Min 30
Resistor - Base (R1) 4.7k Ω
Continuous Collector Current -100mA
Resistor - Emitter Base (R2) 4.7k Ω
RoHS Status RoHS Compliant
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