• image of 阵列双极性结型晶体管>PMP5501V,115
  • image of 阵列双极性结型晶体管>PMP5501V,115
PMP5501V,115
Arrays BJT Transistors
Nexperia USA Inc.
PMP5501V,115 da
-
SOT-563, SOT-666
YES

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image of 阵列双极性结型晶体管>PMP5501V,115
image of 阵列双极性结型晶体管>PMP5501V,115
PMP5501V,115
Arrays BJT Transistors
Nexperia USA Inc.
PMP5501V,115 da
-
SOT-563, SOT-666
YES
TYPEDESCRIPTION
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Max Power Dissipation 300mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 175MHz
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number PMP5501
Pin Count 6
Number of Elements 2
Polarity PNP
Element Configuration Dual
Power Dissipation 300mW
Case Connection ISOLATED
Transistor Application AMPLIFIER
Gain Bandwidth Product 175MHz
Transistor Type 2 PNP (Dual) Matched Pair
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 175MHz
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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