• image of 阵列双极性结型晶体管>HN1A01FE-GR,LF
  • image of 阵列双极性结型晶体管>HN1A01FE-GR,LF
HN1A01FE-GR,LF
Arrays BJT Transistors
Toshiba Semiconductor and Storage
HN1A01FE-GR,LF
-
SOT-563, SOT-666
YES

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image of 阵列双极性结型晶体管>HN1A01FE-GR,LF
image of 阵列双极性结型晶体管>HN1A01FE-GR,LF
HN1A01FE-GR,LF
Arrays BJT Transistors
Toshiba Semiconductor and Storage
HN1A01FE-GR,LF
-
SOT-563, SOT-666
YES
TYPEDESCRIPTION
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 100mW
Reach Compliance Code unknown
Polarity PNP
Power - Max 100mW
Gain Bandwidth Product 80MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage -300mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) -50V
Emitter Base Voltage (VEBO) -5V
hFE Min 120
Continuous Collector Current -150mA
RoHS Status RoHS Compliant
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