• image of 射频二极管>GRP-A-DATA-JAN1N5617
  • image of 射频二极管>GRP-A-DATA-JAN1N5617
GRP-A-DATA-JAN1N5617
RF Diodes
Microsemi
Bag
-
-
YES

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image of 射频二极管>GRP-A-DATA-JAN1N5617
image of 射频二极管>GRP-A-DATA-JAN1N5617
GRP-A-DATA-JAN1N5617
RF Diodes
Microsemi
Bag
-
-
YES
TYPEDESCRIPTION
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 440
Peak Reverse Repetitive Voltage (V) 400
Maximum Continuous Forward Current (A) 1@Ta=55C
Peak Non-Repetitive Surge Current (A) 30
Peak Forward Voltage (V) 1.6@3A
Peak Reverse Current (uA) 0.5
Peak Reverse Recovery Time (ns) 150
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 175
Supplier Temperature Grade Military
Standard Package Name Module
Supplier Package Case A
Mounting Through Hole
Package Length 6.35(Max)
PCB changed 2
Lead Shape Through Hole
Packaging Bag
Part Status Active
Type Switching Diode
Pin Count 2
Configuration Single
Diameter 2.16(Max)
RoHS Status RoHS non-compliant
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