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  • image of 单个绝缘栅双极晶体管>STGD3NB60HDT4
  • image of 单个绝缘栅双极晶体管>STGD3NB60HDT4
： STGD3NB60HDT4
： Single IGBTs
： STMicroelectronics
： STGD3NB60HDT4 d
： -
： TO-252-3, DPak (2 Leads + Tab), SC-63
： YES

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image of 单个绝缘栅双极晶体管>STGD3NB60HDT4
image of 单个绝缘栅双极晶体管>STGD3NB60HDT4
：
STGD3NB60HDT4
：
Single IGBTs
：
STMicroelectronics
：
STGD3NB60HDT4 d
：
-
：
TO-252-3, DPak (2 Leads + Tab), SC-63
：
YES
TYPEDESCRIPTION
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerMESH™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 600V
Max Power Dissipation 50W
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Current Rating 6A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STGD3
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Input Type Standard
Power - Max 50W
Transistor Application MOTOR CONTROL
Drain to Source Voltage (Vdss) 600V
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.8V
Max Collector Current 10A
Reverse Recovery Time 95 ns
Continuous Drain Current (ID) 6A
JEDEC-95 Code TO-252AA
Collector Emitter Breakdown Voltage 600V
Turn On Time 25 ns
Test Condition 480V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 3A
Turn Off Time-Nom (toff) 168 ns
Gate Charge 21nC
Current - Collector Pulsed (Icm) 24A
Td (on/off) @ 25°C 5ns/53ns
Switching Energy 33μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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