• image of 单个绝缘栅双极晶体管>SIGC100T60R3EX1SA1
  • image of 单个绝缘栅双极晶体管>SIGC100T60R3EX1SA1
SIGC100T60R3EX1SA1
Single IGBTs
Infineon Technologies
SIGC100T60R3EX1
-
Die
YES

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image of 单个绝缘栅双极晶体管>SIGC100T60R3EX1SA1
image of 单个绝缘栅双极晶体管>SIGC100T60R3EX1SA1
SIGC100T60R3EX1SA1
Single IGBTs
Infineon Technologies
SIGC100T60R3EX1
-
Die
YES
TYPEDESCRIPTION
Mounting Type Surface Mount
Package / Case Die
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Series TrenchStop™
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 10
ECCN Code EAR99
Terminal Position UPPER
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUUC-N10
Number of Elements 1
Configuration SINGLE
Input Type Standard
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Drain to Source Voltage (Vdss) 600V
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Dual Supply Voltage 600V
Current - Collector (Ic) (Max) 200A
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 200A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 600A
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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