• image of 单个绝缘栅双极晶体管>IRGIB10B60KD1P
  • image of 单个绝缘栅双极晶体管>IRGIB10B60KD1P
IRGIB10B60KD1P
Single IGBTs
Infineon Technologies
IRGIB10B60KD1P
-
TO-220-3 Full Pack
YES

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image of 单个绝缘栅双极晶体管>IRGIB10B60KD1P
image of 单个绝缘栅双极晶体管>IRGIB10B60KD1P
IRGIB10B60KD1P
Single IGBTs
Infineon Technologies
IRGIB10B60KD1P
-
TO-220-3 Full Pack
YES
TYPEDESCRIPTION
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.299997g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Voltage - Rated DC 600V
Max Power Dissipation 44W
Current Rating 16A
Number of Elements 1
Element Configuration Single
Case Connection ISOLATED
Input Type Standard
Transistor Application MOTOR CONTROL
Rise Time 24ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 16A
Reverse Recovery Time 79 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.1V
Turn On Time 46 ns
Test Condition 400V, 10A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 10A
Turn Off Time-Nom (toff) 288 ns
IGBT Type NPT
Gate Charge 41nC
Current - Collector Pulsed (Icm) 32A
Td (on/off) @ 25°C 25ns/180ns
Switching Energy 156μJ (on), 165μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Fall Time-Max (tf) 87ns
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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