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APTGT300A120D3G
IGBTs Modules
Microsemi Corporation
APTGT300A120D3G
-
D-3 Module
YES

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image of 绝缘栅双极晶体管模块>APTGT300A120D3G
image of 绝缘栅双极晶体管模块>APTGT300A120D3G
APTGT300A120D3G
IGBTs Modules
Microsemi Corporation
APTGT300A120D3G
-
D-3 Module
YES
TYPEDESCRIPTION
Factory Lead Time 36 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case D-3 Module
Number of Pins 7
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Published 2012
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Max Power Dissipation 1.25kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 7
Number of Elements 2
Configuration Half Bridge
Element Configuration Dual
Case Connection ISOLATED
Power - Max 1250W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 440A
Current - Collector Cutoff (Max) 8mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 20nF
Turn On Time 400 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 300A
Turn Off Time-Nom (toff) 830 ns
IGBT Type Trench Field Stop
NTC Thermistor No
Input Capacitance (Cies) @ Vce 20nF @ 25V
RoHS Status RoHS Compliant
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