: | TK2P60D(TE16L1,NQ) |
---|---|
: | Single MOSFETs Transistors |
: | Toshiba Semiconductor and Storage |
: | N-Channel Tape |
: | - |
: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
: | YES |
TYPE | DESCRIPTION |
Factory Lead Time | 18 Weeks |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Supplier Device Package | PW-MOLD |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Series | π-MOSVII |
Published | 2009 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Max Operating Temperature | 150°C |
Min Operating Temperature | -55°C |
Number of Elements | 1 |
Power Dissipation-Max | 60W Tc |
Element Configuration | Single |
Power Dissipation | 60W |
Turn On Delay Time | 35 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 4.3Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id | 4.4V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 280pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 2A Ta |
Gate Charge (Qg) (Max) @ Vgs | 7nC @ 10V |
Rise Time | 15ns |
Drain to Source Voltage (Vdss) | 600V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 7 ns |
Turn-Off Delay Time | 55 ns |
Continuous Drain Current (ID) | 2A |
Gate to Source Voltage (Vgs) | 30V |
Input Capacitance | 280pF |
Rds On Max | 4.3 Ω |
Height | 2.3mm |
Length | 6.5mm |
Width | 5.5mm |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
原装正品 | 每颗芯片都来自原厂 |
| |
主要产品 | 只生厂材料 |
| |
现货库存 | 只生产原材料 |
|
原装库存 | Bom 单 | 价格实惠 |