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  • image of 预偏置双极性结型晶体管>PDTA124XT,215
  • image of 预偏置双极性结型晶体管>PDTA124XT,215
： PDTA124XT,215
： Pre-Biased BJT Transistors
： Nexperia USA Inc.
： PDTA124XT,215 d
： -
： TO-236-3, SC-59, SOT-23-3
： YES

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image of 预偏置双极性结型晶体管>PDTA124XT,215
image of 预偏置双极性结型晶体管>PDTA124XT,215
：
PDTA124XT,215
：
Pre-Biased BJT Transistors
：
Nexperia USA Inc.
：
PDTA124XT,215 d
：
-
：
TO-236-3, SC-59, SOT-23-3
：
YES
TYPEDESCRIPTION
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 4.535924g
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 2.1
HTS Code 8541.21.00.95
Max Power Dissipation 250mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number PDTA124
Pin Count 3
Number of Elements 1
Polarity PNP
Element Configuration Single
Transistor Application SWITCHING
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 150mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Resistor - Base (R1) 22 k Ω
Resistor - Emitter Base (R2) 47 k Ω
Height 6.35mm
Length 6.35mm
Width 6.35mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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