: | FJV4101RMTF |
---|---|
: | Pre-Biased BJT Transistors |
: | ON Semiconductor |
: | FJV4101RMTF dat |
: | - |
: | TO-236-3, SC-59, SOT-23-3 |
: | YES |
TYPE | DESCRIPTION |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Number of Pins | 3 |
Weight | 30mg |
Packaging | Tape & Reel (TR) |
Published | 2013 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Max Operating Temperature | 150°C |
Min Operating Temperature | -55°C |
Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 1 |
HTS Code | 8541.21.00.95 |
Voltage - Rated DC | -50V |
Max Power Dissipation | 200mW |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Current Rating | -100mA |
Base Part Number | FJV4101 |
Number of Elements | 1 |
Polarity | PNP |
Element Configuration | Single |
Power Dissipation | 200mW |
Transistor Application | SWITCHING |
Transistor Type | PNP - Pre-Biased |
Collector Emitter Voltage (VCEO) | 50V |
Max Collector Current | 100mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 10mA 5V |
Current - Collector Cutoff (Max) | 100nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500μA, 10mA |
Collector Emitter Breakdown Voltage | 50V |
Transition Frequency | 200MHz |
Collector Emitter Saturation Voltage | -300mV |
Max Breakdown Voltage | 50V |
Frequency - Transition | 200MHz |
Collector Base Voltage (VCBO) | -50V |
Emitter Base Voltage (VEBO) | -10V |
hFE Min | 20 |
Resistor - Base (R1) | 4.7 k Ω |
Continuous Collector Current | -100mA |
Resistor - Emitter Base (R2) | 4.7 k Ω |
Height | 930μm |
Length | 2.92mm |
Width | 1.3mm |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
原装正品 | 每颗芯片都来自原厂 |
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主要产品 | 只生厂材料 |
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现货库存 | 只生产原材料 |
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原装库存 | Bom 单 | 价格实惠 |