• image of 预偏置双极性结型晶体管>FJV4101RMTF
  • image of 预偏置双极性结型晶体管>FJV4101RMTF
FJV4101RMTF
Pre-Biased BJT Transistors
ON Semiconductor
FJV4101RMTF dat
-
TO-236-3, SC-59, SOT-23-3
YES

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image of 预偏置双极性结型晶体管>FJV4101RMTF
image of 预偏置双极性结型晶体管>FJV4101RMTF
FJV4101RMTF
Pre-Biased BJT Transistors
ON Semiconductor
FJV4101RMTF dat
-
TO-236-3, SC-59, SOT-23-3
YES
TYPEDESCRIPTION
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 30mg
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
HTS Code 8541.21.00.95
Voltage - Rated DC -50V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating -100mA
Base Part Number FJV4101
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 200mW
Transistor Application SWITCHING
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage -300mV
Max Breakdown Voltage 50V
Frequency - Transition 200MHz
Collector Base Voltage (VCBO) -50V
Emitter Base Voltage (VEBO) -10V
hFE Min 20
Resistor - Base (R1) 4.7 k Ω
Continuous Collector Current -100mA
Resistor - Emitter Base (R2) 4.7 k Ω
Height 930μm
Length 2.92mm
Width 1.3mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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