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  • image of 预偏置双极性结型晶体管>FJV3114RMTF
  • image of 预偏置双极性结型晶体管>FJV3114RMTF
： FJV3114RMTF
： Pre-Biased BJT Transistors
： ON Semiconductor
： FJV3114RMTF dat
： -
： TO-236-3, SC-59, SOT-23-3
： YES

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image of 预偏置双极性结型晶体管>FJV3114RMTF
image of 预偏置双极性结型晶体管>FJV3114RMTF
：
FJV3114RMTF
：
Pre-Biased BJT Transistors
：
ON Semiconductor
：
FJV3114RMTF dat
：
-
：
TO-236-3, SC-59, SOT-23-3
：
YES
TYPEDESCRIPTION
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 30mg
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 10
HTS Code 8541.21.00.95
Voltage - Rated DC 50V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 100mA
Base Part Number FJV3114
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 200mW
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 250MHz
Collector Emitter Saturation Voltage 300mV
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 10V
hFE Min 68
Resistor - Base (R1) 4.7 k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 47 k Ω
Height 930μm
Length 2.92mm
Width 1.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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