: | DTB543EETL |
---|---|
: | Pre-Biased BJT Transistors |
: | ROHM Semiconductor |
: | DTB543EETL data |
: | - |
: | SC-75, SOT-416 |
: | YES |
TYPE | DESCRIPTION |
Factory Lead Time | 13 Weeks |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | SC-75, SOT-416 |
Number of Pins | 3 |
Packaging | Tape & Reel (TR) |
Published | 2012 |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | TIN SILVER COPPER |
Max Operating Temperature | 150°C |
Min Operating Temperature | -55°C |
Additional Feature | BUILT IN BIAS RESISTOR RATIO 1 |
Max Power Dissipation | 150mW |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 10 |
Base Part Number | DTB543 |
Pin Count | 3 |
Output Voltage | -60mV |
Number of Elements | 1 |
Polarity | PNP |
Element Configuration | Single |
Transistor Application | SWITCHING |
Transistor Type | PNP - Pre-Biased |
Collector Emitter Voltage (VCEO) | 300mV |
Max Collector Current | 500mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 115 @ 100mA 2V |
Current - Collector Cutoff (Max) | 500nA |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 100mA |
Collector Emitter Breakdown Voltage | 12V |
Max Frequency | 260MHz |
Transition Frequency | 260MHz |
Max Breakdown Voltage | 12V |
Frequency - Transition | 260MHz |
hFE Min | 115 |
Resistor - Base (R1) | 4.7 k Ω |
Continuous Collector Current | -500mA |
Resistor - Emitter Base (R2) | 4.7 k Ω |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
原装正品 | 每颗芯片都来自原厂 |
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主要产品 | 只生厂材料 |
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现货库存 | 只生产原材料 |
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原装库存 | Bom 单 | 价格实惠 |