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  • image of 预偏置双极性结型晶体管>DTA115EETL
  • image of 预偏置双极性结型晶体管>DTA115EETL
： DTA115EETL
： Pre-Biased BJT Transistors
： ROHM Semiconductor
： DTA115EETL data
： -
： SC-75, SOT-416
： YES

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image of 预偏置双极性结型晶体管>DTA115EETL
image of 预偏置双极性结型晶体管>DTA115EETL
：
DTA115EETL
：
Pre-Biased BJT Transistors
：
ROHM Semiconductor
：
DTA115EETL data
：
-
：
SC-75, SOT-416
：
YES
TYPEDESCRIPTION
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Number of Pins 3
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
HTS Code 8541.21.00.75
Voltage - Rated DC -50V
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -20mA
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number DTA115
Pin Count 3
Max Output Current 100mA
Operating Supply Voltage 50V
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 150mW
Transistor Application SWITCHING
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 20mA
DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 5mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 250MHz
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
hFE Min 82
Resistor - Base (R1) 100 k Ω
Continuous Collector Current -100mA
Resistor - Emitter Base (R2) 100 k Ω
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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