• image of 双极性结型晶体管阵列>MUN5134DW1T1G
  • image of 双极性结型晶体管阵列>MUN5134DW1T1G
MUN5134DW1T1G
BJT Transistors Arrays
ON Semiconductor
MUN5134DW1T1G d
-
6-TSSOP, SC-88, SOT-363
YES

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image of 双极性结型晶体管阵列>MUN5134DW1T1G
image of 双极性结型晶体管阵列>MUN5134DW1T1G
MUN5134DW1T1G
BJT Transistors Arrays
ON Semiconductor
MUN5134DW1T1G d
-
6-TSSOP, SC-88, SOT-363
YES
TYPEDESCRIPTION
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Factory Lead Time 30 Weeks
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 0.47
Voltage - Rated DC -50V
Max Power Dissipation 250mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -100mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MUN51**DW1T
Pin Count 6
Qualification Status Not Qualified
Number of Elements 2
Polarity PNP
Element Configuration Dual
Power Dissipation 250mW
Transistor Application SWITCHING
Halogen Free Halogen Free
Transistor Type 2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 50V
hFE Min 80
Resistor - Base (R1) 22k Ω
Continuous Collector Current -100mA
Resistor - Emitter Base (R2) 47k Ω
RoHS Status RoHS Compliant
Lead Free Lead Free
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