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  • image of 双极性结型晶体管阵列>DMA264020R
  • image of 双极性结型晶体管阵列>DMA264020R
： DMA264020R
： BJT Transistors Arrays
： Panasonic Electronic Components
： DMA264020R data
： -
： SOT-23-6
： YES

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image of 双极性结型晶体管阵列>DMA264020R
image of 双极性结型晶体管阵列>DMA264020R
：
DMA264020R
：
BJT Transistors Arrays
：
Panasonic Electronic Components
：
DMA264020R data
：
-
：
SOT-23-6
：
YES
TYPEDESCRIPTION
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2010
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Max Operating Temperature 150°C
Additional Feature BUILT IN BIAS RESISITANCE RATIO 1
HTS Code 8541.21.00.95
Max Power Dissipation 300mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number DMA26402
Number of Elements 2
Polarity PNP
Element Configuration Dual
Transistor Application SWITCHING
Transistor Type 2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) -50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage -250mV
Max Breakdown Voltage 50V
Resistor - Base (R1) 22k Ω
Continuous Collector Current -100mA
Resistor - Emitter Base (R2) 22k Ω
Height 1.1mm
Length 2.9mm
Width 1.5mm
RoHS Status RoHS Compliant
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