• image of 阵列双极性结型晶体管>UMZ1NTR
  • image of 阵列双极性结型晶体管>UMZ1NTR
UMZ1NTR
Arrays BJT Transistors
ROHM Semiconductor
UMZ1NTR datashe
-
6-TSSOP, SC-88, SOT-363
YES

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image of 阵列双极性结型晶体管>UMZ1NTR
image of 阵列双极性结型晶体管>UMZ1NTR
UMZ1NTR
Arrays BJT Transistors
ROHM Semiconductor
UMZ1NTR datashe
-
6-TSSOP, SC-88, SOT-363
YES
TYPEDESCRIPTION
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2000
JESD-609 Code e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Type General Purpose
Terminal Finish Tin/Copper (Sn/Cu)
HTS Code 8541.21.00.75
Max Power Dissipation 150mW
Terminal Form GULL WING
Current Rating 150mA
Base Part Number *MZ1
Pin Count 6
Number of Elements 2
Polarity PNP, NPN
Element Configuration Dual
Power Dissipation 150mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 180MHz
Transistor Type NPN, PNP
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 50V
Max Frequency 100MHz
Transition Frequency 180MHz
Max Breakdown Voltage 50V
Frequency - Transition 180MHz 140MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) -6V
hFE Min 120
Continuous Collector Current -150mA
VCEsat-Max 0.4 V
Height 900μm
Length 2mm
Width 1.25mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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