• image of 阵列双极性结型晶体管>MC1413BDR2G
  • image of 阵列双极性结型晶体管>MC1413BDR2G
MC1413BDR2G
Arrays BJT Transistors
ON Semiconductor
MC1413BDR2G dat
-
16-SOIC (0.154, 3.90mm Width)
YES

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image of 阵列双极性结型晶体管>MC1413BDR2G
image of 阵列双极性结型晶体管>MC1413BDR2G
MC1413BDR2G
Arrays BJT Transistors
ON Semiconductor
MC1413BDR2G dat
-
16-SOIC (0.154, 3.90mm Width)
YES
TYPEDESCRIPTION
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 15 Weeks
Contact Plating Tin
Mount Surface Mount, Through Hole
Mounting Type Surface Mount
Package / Case 16-SOIC (0.154, 3.90mm Width)
Number of Pins 16
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 16
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC 50V
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 500mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MC1413B
Pin Count 16
Output Voltage 50V
Number of Elements 7
Polarity NPN
Configuration COMPLEX
Output Current 500mA
Transistor Application SWITCHING
Halogen Free Halogen Free
Transistor Type 7 NPN Darlington
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 350mA 2V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 500μA, 350mA
Collector Emitter Breakdown Voltage 1.1V
Collector Emitter Saturation Voltage 1.6V
hFE Min 1000
Height 3.9878mm
Length 9.9822mm
Width 1.4986mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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